Researchers from a consortium joining IJL (Nancy, France), IPCMS (Strasbourg, France) and C4S (Cluj, Romania) were able to manipulate the electronic spin inside a very thin magnetic layer. They did this by use of a lab-on-chip integrating a magnetic tunnel transistor. This discovery could lead to new devices that use Read more…
Jon Gorchon wrote a review paper on Ultra-fast Spintronic in # 78 of reflets de la physique which you can access online (https://www.refletsdelaphysique.fr/articles/refdp/pdf/2024/02/refdp202478p12.pdf) Abstract: Magnetism is omnipresent in our lives: compasses, electric motors, transformers, magnetic storage for the “cloud”… Understanding how the magnetization of a magnet behaves in the face Read more…
Through a long-standing collaboration between the Spin team at the IJL and the LSI at the Ecole Polytechnique, the injection of anomalous Hall currents has been studied in Hall devices in contact with a lateral load circuit. The voltage and lateral power variation extracted confirm the theoretical predictions. This research Read more…
Antiferromagnets are an exciting class of materials due to their inherently THz dynamics and complex interactions. Here, the highlight of our work is the demonstration that it is possible to switch the coupled antiferromagnet with a single femtosecond laser pulse. Our results provide a means of direct and deterministic control Read more…
Thanks to a collaboration between IJL and SPINTEC laboratories we demonstrate that single pulse all optical switching is achieved in Co68Tb32/Co100-xGdx/Co68Tb32 tri-layers. The reversal behavior can be tuned from toggle to precessional switching by changing the composition of the Co100-xGdxalloy. More detail: Appl. Phys. Lett. 124, 022405 (2024)
A new study has shed light on how a thin layer of platinum with very high crystalline quality can convert the spin of electrons into electric current and vice versa. This phenomenon, known as spin-to-charge interconversion, is crucial for developing novel devices that use the spin of electrons for storing Read more…
Low-energy spin precession of electrons is observed in a thin film of cobalt-aluminum (CoAl). The precession angle can be controled via the strength of the molecular field. This behavior arises from the variation of the exchange field with temperature. We observe this phenomenon for electron energies between 0.9 and 1.2 eV. For more Read more…
During his Phd V. Desbuis studied hot electrons transport. These electrons are extracted from a magnetic tunnel junction and injected into a metal base. Energy and wave-vector analysis was used to disentangle the different scattering contributions. Results are interpreted as being mainly influenced by inelastic scattering. An explicit transport model Read more…
In a paper published in PHYSICAL REVIEW MATERIALS, we investigate a new family of topological materials, the half-Heuslers PdYBi and PtYBi, which have potential applications in low-energy spintronics devices. We report on the epitaxial growth and characterization of thin films of these compounds, using various techniques such as electron diffraction, Read more…
In this paper we discuss the optimization of the deposition of stoichiometric and epitaxial Pt/FVO heterostructures by pulsed laser deposition and examines their spin-related phenomena. From angle-dependent magnetotransport measurements, both anisotropic magnetoresistance and spin Hall magnetoresistance (SMR) effects were observed. The findings show the SMR component as the primary contributor Read more…