Low-Energy Spin Manipulation
Researchers from a consortium joining IJL (Nancy, France), IPCMS (Strasbourg, France) and C4S (Cluj, Romania) were able to manipulate the electronic spin inside a very thin magnetic layer. They did this by use of a lab-on-chip integrating a magnetic tunnel transistor. This discovery could lead to new devices that use the spin precession effect presented in their paper.
This work was partially supported by France 2030 government investment plan managed by the French National Research Agency under grant reference PEPR SPIN –MAT ANR-22-EXSP-0007.
